Pattern formation in multistacked-quantum-dot-based microcavities: modelization and role of gain asymmetries in the alpha factor - art. no. 64681B

We develop a model that describes the optical response of a semiconductor quantum dot microcavity pumped above transparency but kept slightly below threshold. The model takes into account the inhomogeneous broadening of the dot emission, the coupling mechanisms between quantum dots and the wetting layer and incorporates gain asymmetry factors in the thermo-emission and capture coefficients. The role of asymmetries with respect to alpha factor and pattern formation is investigated. We then study the conditions for the onset of bistability and modulational instability and characterize the patterns formed.