The density of states distribution (DOS) in the mobility gap of undoped glow-discharge a-Si1-x Ge(x):H alloy films was determined by means of field effect tecnique. The specimens were grown at different percentages of Ge. The DOS of the films shows a behaviour related to the content of germanium and it is independent of the presence of additional hydrogen in discharge.
PHYSICAL-PROPERTIES OF HYDROGENATED AMORPHOUS GALLIUM-ARSENIDE
SCHIAVULLI, Luigi;
1991-01-01
Abstract
The density of states distribution (DOS) in the mobility gap of undoped glow-discharge a-Si1-x Ge(x):H alloy films was determined by means of field effect tecnique. The specimens were grown at different percentages of Ge. The DOS of the films shows a behaviour related to the content of germanium and it is independent of the presence of additional hydrogen in discharge.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
