Preface — 10th international conference on hot-wire CVD (Cat-CVD) processes (HWCVD10)

The 10th International Conference on Hot Wire (Cat) and Initiated Chemical Vapor Deposition (HWCVD10), hosted by Kyushu Institute of Technology, was held in Kitakyushu International Conference Center, Kitakyushu, Japan, on September 3–6, 2018. One of the topics dis- cussed in the conference is the recent progress in catalytic chemical vapor deposition (Cat-CVD), also referred to as hot-wire CVD (HWCVD) or hot-filament CVD (HFCVD), which is a category of CVD using active radicals formed through catalytic cracking of source gases on a heated metal wire. Cat-CVD has been used to form a variety of films, pre- dominantly silicon-based films such as amorphous silicon, nanocrys- talline silicon, and silicon nitride, carbon-based films including dia- mond and graphene, and organic films. In addition to the film formation technology, the conference also covered the utilization of radicals generated by catalytic cracking on a heated wire in a Cat-CVD system for surface treatments and etching. The conference had 80 attendees from 11 countries, and a total of 56 papers, including 11 invited talks, 23 contributed talks, and 22 posters, were presented by the attendees.