Ultrafast relaxation of photoexcited nonequilibrium holes is selectively investigated in bulk GaAs and InP using a high-sensitivity two-color absorption saturation technique. Measurements of the hole characteristic thermalization time as a function of the lattice temperature and of the carrier density and initial average energy show that nonequilibrium hole relaxation is dominated by hole-optical phonon interactions in the range 100-300 K. Comparison of the experimental results with a numerical model of carrier dynamics permits the determination of the optical deformation potential in both of these compounds.
Ultrafast hole relaxation in III-V semiconductors
Tommasi R.Membro del Collaboration Group
;
1998-01-01
Abstract
Ultrafast relaxation of photoexcited nonequilibrium holes is selectively investigated in bulk GaAs and InP using a high-sensitivity two-color absorption saturation technique. Measurements of the hole characteristic thermalization time as a function of the lattice temperature and of the carrier density and initial average energy show that nonequilibrium hole relaxation is dominated by hole-optical phonon interactions in the range 100-300 K. Comparison of the experimental results with a numerical model of carrier dynamics permits the determination of the optical deformation potential in both of these compounds.File in questo prodotto:
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