A new deposition method, initiated PECVD (iPECVD), is proposed for the formation of organosilicon polymers with enhanced monomer structure retention compared to conventional PECVD. The quasi-selective fragmentation of an initiator is driven by a low power plasma discharge, as opposed to using a hot filament for initiator decomposition as in a standard, plasma-free initiated CVD (iCVD). The weak peroxide bond (O-O) in the initiator permits the formation of radical species at very low plasma power density (0.07W·cm -2). Kinetic analysis of the deposition process indicates that the film formation rate follows the Arrhenius law, similarly to other iCVD process from organosilicon monomers. Herein we show a new deposition method, initiated-PECVD (iPECVD), as an alternative to iCVD and PECVD, for the monomers that are not easily polymerizable by iCVD (e.g., the organosilicon monomers) but where a certain structure retention is needed. The addition of a radical initiator allows to ignite a plasma discharge at plasma density as low as 0.07W·cm -2. In this condition the carbon content of the monomer molecule is completely retained and at reasonably high deposition rate. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Initiated PECVD of organosilicon coatings: A new strategy to enhance monomer structure retention
Coclite A. M.;
2012-01-01
Abstract
A new deposition method, initiated PECVD (iPECVD), is proposed for the formation of organosilicon polymers with enhanced monomer structure retention compared to conventional PECVD. The quasi-selective fragmentation of an initiator is driven by a low power plasma discharge, as opposed to using a hot filament for initiator decomposition as in a standard, plasma-free initiated CVD (iCVD). The weak peroxide bond (O-O) in the initiator permits the formation of radical species at very low plasma power density (0.07W·cm -2). Kinetic analysis of the deposition process indicates that the film formation rate follows the Arrhenius law, similarly to other iCVD process from organosilicon monomers. Herein we show a new deposition method, initiated-PECVD (iPECVD), as an alternative to iCVD and PECVD, for the monomers that are not easily polymerizable by iCVD (e.g., the organosilicon monomers) but where a certain structure retention is needed. The addition of a radical initiator allows to ignite a plasma discharge at plasma density as low as 0.07W·cm -2. In this condition the carbon content of the monomer molecule is completely retained and at reasonably high deposition rate. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
