The microwave plasma enhanced chemical vapor deposition technique has been employed to grow polycrystalline diamond films on p-doped Si (100) substrates starting from highly diluted (1% CH 4 in H 2) gas mixtures. Coplanar interdigitated Cr/Au contacts have been thermally evaporated on two samples about 8 μm thick having different grain size. Dark current-voltage (I-V) measurements and impedance characterization have been found to be dependent on the grain size and on the quality of the examined samples.
Preliminary study on polycrystalline diamond films suitable for radiation detection
ACQUAFREDDA, Pasquale;CRISMALE, VITONOFRIO;DE GIACOMO, ALESSANDRO;FUSCO, Piergiorgio;GIORDANO, FRANCESCO;LONGO, Savino;LOPARCO, FRANCESCO;VALENTINI, Antonio;
2009-01-01
Abstract
The microwave plasma enhanced chemical vapor deposition technique has been employed to grow polycrystalline diamond films on p-doped Si (100) substrates starting from highly diluted (1% CH 4 in H 2) gas mixtures. Coplanar interdigitated Cr/Au contacts have been thermally evaporated on two samples about 8 μm thick having different grain size. Dark current-voltage (I-V) measurements and impedance characterization have been found to be dependent on the grain size and on the quality of the examined samples.File in questo prodotto:
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