Eumelanin-type biopolymers have attracted growing interest in the quest for soft bioinspired functional materials for application in organoelectronics. Recently, a metal-insulator-semiconductor device with a good quality interface was produced by spin coating of a commercial synthetic eumelanin-like material on a dry plasma-modified silicon surface. As a proof-of-concept step toward the design and implementation of next-generation eumelanin-inspired devices, we report herein an expedient chemical strategy to bestow n-type performance to polydopamine, a highly popular eumelanin-related biopolymer with intrinsic semiconductor behaviour, and to tune its electrical properties. The strategy relies on aerial co-oxidation of dopamine with suitable aromatic amines, e.g. 3-aminotyrosine or pphenylenediamine, leading to good quality black polymeric films. Capacitance–voltage experiments on poly(dopamine/3-aminotyrosine) and poly(dopamine/p-phenylenediamine)-based metal insulator semiconductor devices on p-Si indicated a significant increase in flat band voltage with respect to polydopamine and previous synthetic eumelanin-based diodes. Variations of the flat band voltage under vacuum were observed for each device. These results point to polydopamine as a versatile eumelanin-type water-dependent semiconductor platform amenable to fine tuning of its electronic properties through incorporation of p-conjugating aromatic amines to tailor functionality.
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|Titolo:||Engineering polydopamine films with tailored behaviour for next-generation eumelanin-related hybrid devices|
|Data di pubblicazione:||2013|
|Appare nelle tipologie:||1.1 Articolo in rivista|