CINECA IRIS Institutional Research Information System
IRIS è la soluzione IT che facilita la raccolta e la gestione dei dati relativi alle attività e ai prodotti della ricerca. Fornisce a ricercatori, amministratori e valutatori gli strumenti per monitorare i risultati della ricerca, aumentarne la visibilità e allocare in modo efficace le risorse disponibili.
EnglishPulsed-laser deposition (PLD) of ZnTe was performed at; lambda(pld) = 1064 nm and; lambda(pld) = 532 nm employing nanosecond pulses of a Nd:YAG laser. Thin ZnTe films (thickness approximate to 2 mu m) were deposited at room temperature on fused silica glass substrates. X-ray diffraction revealed the influence of the ablation wavelengths on the deposited film texture. The film formed lambda(pld) = 532 nm is amorphous, whereas the one ablated at lambda(pld) = 1064 nm was amorphous but contained zincblende and wurtzite crystallites as well. The samples exhibited a broad photocurrent response extending into the visible and infrared part of the spectrum to almost 1 eV. The absorption coefficients, which were measured with standard constant photocurrent method (s-CPM), showed that the bandgap of the films is considerably shifted to lower energies of 1.0 eV as compared to the crystalline source material of 2.26 eV. (c) 2005 Elsevier B.V. All rights reserved.
Absorption and photoconductivity properties of ZnTe thin films formed by pulsed-laser deposition on glass / Erlacher A; Ambrico A; Perna G; Schiavulli L; Ligonzo T; Jaeger H; Ulrich B. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - 248:1-4(2005), pp. 402-405.
Scheda prodotto non validato
Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo
| Titolo: | Absorption and photoconductivity properties of ZnTe thin films formed by pulsed-laser deposition on glass |
| Autori: | |
| Data di pubblicazione: | 2005 |
| Rivista: | |
| Citazione: | Absorption and photoconductivity properties of ZnTe thin films formed by pulsed-laser deposition on glass / Erlacher A; Ambrico A; Perna G; Schiavulli L; Ligonzo T; Jaeger H; Ulrich B. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - 248:1-4(2005), pp. 402-405. |
| Abstract: | Pulsed-laser deposition (PLD) of ZnTe was performed at; lambda(pld) = 1064 nm and; lambda(pld) = 532 nm employing nanosecond pulses of a Nd:YAG laser. Thin ZnTe films (thickness approximate to 2 mu m) were deposited at room temperature on fused silica glass substrates. X-ray diffraction revealed the influence of the ablation wavelengths on the deposited film texture. The film formed lambda(pld) = 532 nm is amorphous, whereas the one ablated at lambda(pld) = 1064 nm was amorphous but contained zincblende and wurtzite crystallites as well. The samples exhibited a broad photocurrent response extending into the visible and infrared part of the spectrum to almost 1 eV. The absorption coefficients, which were measured with standard constant photocurrent method (s-CPM), showed that the bandgap of the films is considerably shifted to lower energies of 1.0 eV as compared to the crystalline source material of 2.26 eV. (c) 2005 Elsevier B.V. All rights reserved. |
| Handle: | http://hdl.handle.net/11586/132539 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
File in questo prodotto:
http://hdl.handle.net/11586/132539
Copyright © 2021