The passivation of GaAs (100) surface has been performed by using remote N-2-H-2 (3% in H-2) RF plasma nitridation. The samples, consisting of n-doped GaAs wafers, show photoluminescence enhancement when the nitridation time and exposure to the plasma are in a narrow temporal window, so that a very thin (about 10 Angstrom) GaN layer is deposited on the GaAs surface. Pure N-2 nitridation does not provide an efficient passivation, because it results in GaN layers with As and AsNx segregation at the GaN/GaAs interface. Increase of Au-GaAs Schottky barrier with the insertion of GaN interlayer and improvement of current-voltage characteristic have been observed. (C) 2002 Elsevier Science B.V. All rights reserved.

Optical and electrical characterization of n-GaAs surfaces passivated by N2-H2 plasma

LIGONZO, Teresa;SCHIAVULLI, Luigi;
2003-01-01

Abstract

The passivation of GaAs (100) surface has been performed by using remote N-2-H-2 (3% in H-2) RF plasma nitridation. The samples, consisting of n-doped GaAs wafers, show photoluminescence enhancement when the nitridation time and exposure to the plasma are in a narrow temporal window, so that a very thin (about 10 Angstrom) GaN layer is deposited on the GaAs surface. Pure N-2 nitridation does not provide an efficient passivation, because it results in GaN layers with As and AsNx segregation at the GaN/GaAs interface. Increase of Au-GaAs Schottky barrier with the insertion of GaN interlayer and improvement of current-voltage characteristic have been observed. (C) 2002 Elsevier Science B.V. All rights reserved.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11586/131184
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