Thin-film samples have been prepared by evaporating a commercial fullerene C-60 powder from a tungsten crucible, at a pressure of 10(-5) Pa on to quartz or Coming glass substrates. Samples were equipped with coplanar Cr-Au electrodes evaporated onto the sm face of the film. Dark-conductivity measurements in the range 300-600 K evidence the existence of hysteresis phenomena. Thermal annealing influences photoconductivity and changes the power coefficient in the power law illumination-intensity dependence of photoconductivity. The influence of oxygen adsorbed in the film matrix on the electrical proper ties and on the density of states is discussed. A tentative for explaining the photoconductivity-light-intensity dependence has been done assuming a continuous density-of-state distribution in the energy gap of the semiconductor.
Dark- and photo-conductivity measurements on films of fullerene C-60
SCHIAVULLI, Luigi;LIGONZO, Teresa;VALENTINI, Antonio
1998-01-01
Abstract
Thin-film samples have been prepared by evaporating a commercial fullerene C-60 powder from a tungsten crucible, at a pressure of 10(-5) Pa on to quartz or Coming glass substrates. Samples were equipped with coplanar Cr-Au electrodes evaporated onto the sm face of the film. Dark-conductivity measurements in the range 300-600 K evidence the existence of hysteresis phenomena. Thermal annealing influences photoconductivity and changes the power coefficient in the power law illumination-intensity dependence of photoconductivity. The influence of oxygen adsorbed in the film matrix on the electrical proper ties and on the density of states is discussed. A tentative for explaining the photoconductivity-light-intensity dependence has been done assuming a continuous density-of-state distribution in the energy gap of the semiconductor.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
