The Hall mobility in undoped microcrystalline Si:H, Cl films has been measured in the temperature range 130<T<300K. The dependence of μH on the temperature clearly evidences two different transport mechanisms. Above T0=200 K, the Hall mobility has an activation energy of about 0.3 eV, while below T0 it is practically temperature independent.
Hall mobility in undoped microcrystalline Si:H,Cl films.
LIGONZO, Teresa
1983-01-01
Abstract
The Hall mobility in undoped microcrystalline Si:H, Cl films has been measured in the temperature range 130File in questo prodotto:
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