Interstrip and backplane capacitances on silicon microstrip detectors with p(+) strip on n substrate of 320 mu m thickness were measured for pitches between 60 and 240 mu m and width over pitch ratios between 0.13 and 0.5. Parametrisations of capacitance w.r.t. pitch and width were compared with data. The detectors were measured before and after being irradiated to a fluence of 4 x 10(14) protons/cm(2) of 24 GeV/e momentum. The effect of the crystal orientation of the silicon has been found to have a relevant influence on the surface radiation damage, favouring the choice of a [1 0 0] substrate. Working at high bias (up to 500 V in CMS) might be critical for the stability of detector, for a small width over pitch ratio. The influence of having a metal strip larger than the p(+) implant has been studied and found to enhance the stability. (C) 2000 Elsevier Science B.V. All rights reserved.

New results on silicon microstrip detectors of CMS tracker

MY, Salvatore;SELVAGGI, Giovanna;DE PALMA, Mauro
2000

Abstract

Interstrip and backplane capacitances on silicon microstrip detectors with p(+) strip on n substrate of 320 mu m thickness were measured for pitches between 60 and 240 mu m and width over pitch ratios between 0.13 and 0.5. Parametrisations of capacitance w.r.t. pitch and width were compared with data. The detectors were measured before and after being irradiated to a fluence of 4 x 10(14) protons/cm(2) of 24 GeV/e momentum. The effect of the crystal orientation of the silicon has been found to have a relevant influence on the surface radiation damage, favouring the choice of a [1 0 0] substrate. Working at high bias (up to 500 V in CMS) might be critical for the stability of detector, for a small width over pitch ratio. The influence of having a metal strip larger than the p(+) implant has been studied and found to enhance the stability. (C) 2000 Elsevier Science B.V. All rights reserved.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11586/88861
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