A silicon pixel detector, developed in RD19, and consisting of 4 planes, similar to 30 cm(2) each, is operating for the first time in the lead ion experiment WA97 at CERN. The 288 CMOS readout chips are bump-bonded to 48 Si detector matrices, assembled in 8 identical arrays. The total number of pixel cells is nearly 300 000 and each cell, 75 mu m x 500 mu m, contains a complete signal processing chain. Overall dead area is less than 3%.

CONSTRUCTION AND CHARACTERIZATION OF A 117-CM(2) SILICON PIXEL DETECTOR

DI BARI, Domenico;
1995-01-01

Abstract

A silicon pixel detector, developed in RD19, and consisting of 4 planes, similar to 30 cm(2) each, is operating for the first time in the lead ion experiment WA97 at CERN. The 288 CMOS readout chips are bump-bonded to 48 Si detector matrices, assembled in 8 identical arrays. The total number of pixel cells is nearly 300 000 and each cell, 75 mu m x 500 mu m, contains a complete signal processing chain. Overall dead area is less than 3%.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11586/88218
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