Capacitance, resistance and current measurements were carried out on single-sided, n(+) on n silicon strip detectors. We studied the type inversion after irradiating the detectors with neutron fluences up to 8.3 x 10(13) neutron/cm(2). To understand the macroscopic irradiation effects, a SPICE model of the detector was developed. Simulating the capacitance measurements, we were able to reproduce the measured frequency dependence of the relevant capacitances, both for non-irradiated and for irradiated detectors. (C) 1999 Published by Elsevier Science B.V. All rights reserved.
Characterisation and simulation of a single-sided, n(+) on n silicon microstrip detector before and after neutron irradiation
MY, Salvatore;SELVAGGI, Giovanna;DE PALMA, Mauro
1999-01-01
Abstract
Capacitance, resistance and current measurements were carried out on single-sided, n(+) on n silicon strip detectors. We studied the type inversion after irradiating the detectors with neutron fluences up to 8.3 x 10(13) neutron/cm(2). To understand the macroscopic irradiation effects, a SPICE model of the detector was developed. Simulating the capacitance measurements, we were able to reproduce the measured frequency dependence of the relevant capacitances, both for non-irradiated and for irradiated detectors. (C) 1999 Published by Elsevier Science B.V. All rights reserved.File in questo prodotto:
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