The effects of the exposure of organic thin-film transistors, comprising different organic semiconductors and gate dielectrics, to 1-pentanol are investigated. The transistor sensors exhibited an increase or a decrease of the transient source-drain current in the presence of the analyte, most likely as a result of a trapping or of a doping process of the organic active layer. The occurrence of these two effects, that can also coexist, depend on the gate-dielectric/organic semiconductor interface and on the applied gate field. Evidence of a systematic and sizable response enhancement for an OTFT sensor operated in the enhanced mode is also presented. (c) 2005 Elsevier B.V. All rights reserved.
Scheda prodotto non validato
Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo
Titolo: | Interface and gate bias dependent responses of sensing organic thin-film transistors |
Autori: | TORSI, Luisa (Corresponding) |
Data di pubblicazione: | 2005 |
Rivista: | |
Handle: | http://hdl.handle.net/11586/80008 |
Appare nelle tipologie: | 1.1 Articolo in rivista |