The Hall mobility μH in phosphorus- and boron-doped Si:H, Cl films was measured in the temperature range 130–300 K. The conductivity is markedly influenced by the doping, and the activation energies of both the Hall mobility and the conductivity as functions of the temperature are much lower in doped samples than in undoped samples. The process tends to become unactivated at higher doping levels.
Hall mobility in doped Si:H,Cl films.
LIGONZO, Teresa
1984-01-01
Abstract
The Hall mobility μH in phosphorus- and boron-doped Si:H, Cl films was measured in the temperature range 130–300 K. The conductivity is markedly influenced by the doping, and the activation energies of both the Hall mobility and the conductivity as functions of the temperature are much lower in doped samples than in undoped samples. The process tends to become unactivated at higher doping levels.File in questo prodotto:
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