Pure and oxygenated n-type silicon samples have been characterized by Hall mobility and conductivity measurements as a function of temperature, before and after irradiation. p(+)n silicon diodes have been characterized by C-V and reverse current measurements as a function of temperature. Investigated samples have been grown by FZ technique in Polovodice (Prague) and have been irradiated with protons at CERN facilities (Phi = 4 x 10(12)-10(14) protons/cm(2)). Carrier concentrations have been evaluated by conductivity and Hall mobility measurements. C-V measurements on irradiated diodes (Phi congruent to 10(12) protons/cm(2)) show a decrease of the effective concentration N-eff with respect to unirradiated samples. Reverse current measurements as a function of temperature show that oxygenated diode has a leakage current lower than that of purr diode at temperatures less than 250 K. (C) 1999 Elsevier Science B.V. All rights reserved.
Electrical characterization of standard and oxygenated irradiated ROSE diodes
DE PALMA, Mauro
1999-01-01
Abstract
Pure and oxygenated n-type silicon samples have been characterized by Hall mobility and conductivity measurements as a function of temperature, before and after irradiation. p(+)n silicon diodes have been characterized by C-V and reverse current measurements as a function of temperature. Investigated samples have been grown by FZ technique in Polovodice (Prague) and have been irradiated with protons at CERN facilities (Phi = 4 x 10(12)-10(14) protons/cm(2)). Carrier concentrations have been evaluated by conductivity and Hall mobility measurements. C-V measurements on irradiated diodes (Phi congruent to 10(12) protons/cm(2)) show a decrease of the effective concentration N-eff with respect to unirradiated samples. Reverse current measurements as a function of temperature show that oxygenated diode has a leakage current lower than that of purr diode at temperatures less than 250 K. (C) 1999 Elsevier Science B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
