Tin halide perovskites represent the most suitable alternative to their lead-based counterparts for sustainable photovoltaics. One of the most important drawbacks of this class of materials is the intrinsic tendency of tin (II) to oxidize under certain conditions and as a consequence of aging. Here, we explore plasma processing to gently treat the surface of the tin perovskite films. As shown by chemical, optical, and morphological analyses, this treatment by generating transient active species on the surface of the material impacts its aging, inhibiting the tendency of tin (II) to oxidize. Plasma-treated stored devices show a power conversion efficiency slightly higher and narrower in the distribution than that of the reference devices. The positive impact of this noninvasive technique, which can be easily implemented in large-area manufacturing facilities, increases the potential of lead-free alternative perovskite photovoltaics.

Plasma-Based Modification of Tin Halide Perovskite Interfaces for Photovoltaic Applications

Armenise V.;Fracassi F.;Palumbo F.;Listorti A.
2024-01-01

Abstract

Tin halide perovskites represent the most suitable alternative to their lead-based counterparts for sustainable photovoltaics. One of the most important drawbacks of this class of materials is the intrinsic tendency of tin (II) to oxidize under certain conditions and as a consequence of aging. Here, we explore plasma processing to gently treat the surface of the tin perovskite films. As shown by chemical, optical, and morphological analyses, this treatment by generating transient active species on the surface of the material impacts its aging, inhibiting the tendency of tin (II) to oxidize. Plasma-treated stored devices show a power conversion efficiency slightly higher and narrower in the distribution than that of the reference devices. The positive impact of this noninvasive technique, which can be easily implemented in large-area manufacturing facilities, increases the potential of lead-free alternative perovskite photovoltaics.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11586/525700
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