For the construction of the silicon microstrip detectors for the Tracker of the CMS experiment, two different substrate choices were investigated: A high- resistivity (6kΩcm) substrate with ⟨111⟩ crystal orientation and a low-resistivity (2 kΩcm) one with ⟨100⟩ crystal orientation. The interstrip and backplane capaci- tances were measured before and after the exposure to radiation in a range of strip pitches from 60μm to 240μm and for values of the width-over-pitch ratio between 0.1 and 0.5.
Comparative study of < 111 > and < 100 > crystals and capacitance measurements on Si strip detectors in CMS
M. de Palma;S. My
1999-01-01
Abstract
For the construction of the silicon microstrip detectors for the Tracker of the CMS experiment, two different substrate choices were investigated: A high- resistivity (6kΩcm) substrate with ⟨111⟩ crystal orientation and a low-resistivity (2 kΩcm) one with ⟨100⟩ crystal orientation. The interstrip and backplane capaci- tances were measured before and after the exposure to radiation in a range of strip pitches from 60μm to 240μm and for values of the width-over-pitch ratio between 0.1 and 0.5.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.