A comparative Study on silicon microstrip detectors of the same geometry built on <1 0 0> low resistivity and <1 1 1> high resistivity substrates has been carried out. Leakage current, depletion voltage and interstrip capacitance have been measured before and after irradiation with 34 MeV protons at regular intervals during the beneficial annealing period. The samples were irradiated at four different fluences up to similar or equal to2 x 10(14) n/cm(2). The measurements after irradiation show that leakage current does not depend on substrate resistivity and crystal orientation. Above type inversion also, the depletion voltage does not depend substantially on the initial resistivity. The interstrip capacitance is damaged both for <1 0 0> and <1 1 1> silicon substrates, even if in the first case the interstrip capacitance increase is lower, as expected from the known difference in charge trapping effects. The results of this work are compared with previous measurements performed on identical structures irradiated with neutrons. (C) 2002 Elsevier Science B.V. All rights reserved.

A comparison on radiation tolerance of microstrip detectors built on < 1 0 0 > and < 1 1 1 > silicon substrates after proton irradiation

MY S;SELVAGGI, Giovanna;DE PALMA, Mauro
2002-01-01

Abstract

A comparative Study on silicon microstrip detectors of the same geometry built on <1 0 0> low resistivity and <1 1 1> high resistivity substrates has been carried out. Leakage current, depletion voltage and interstrip capacitance have been measured before and after irradiation with 34 MeV protons at regular intervals during the beneficial annealing period. The samples were irradiated at four different fluences up to similar or equal to2 x 10(14) n/cm(2). The measurements after irradiation show that leakage current does not depend on substrate resistivity and crystal orientation. Above type inversion also, the depletion voltage does not depend substantially on the initial resistivity. The interstrip capacitance is damaged both for <1 0 0> and <1 1 1> silicon substrates, even if in the first case the interstrip capacitance increase is lower, as expected from the known difference in charge trapping effects. The results of this work are compared with previous measurements performed on identical structures irradiated with neutrons. (C) 2002 Elsevier Science B.V. All rights reserved.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11586/4188
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 3
  • ???jsp.display-item.citation.isi??? 4
social impact