A polybithiophene p-type/titanium dioxide n-type ( p-pbT n-TiO2) heterojunction has been prepared by electrochemically depositing in sequence both materials. Electrical investigation reveals the diode-like behaviour with a rectifying ratio at 3 V as high as 3 × 103. The analysis in the framework of the standard semiclassical theory for a p-n junction allows to determine the band alignment. The lower radiative efficiency of p-pbT n-TiO2 with respect to p-pbT/Pt is related to the separation of photogenerated carriers induced by the junction, giving an indirect experimental evidence of a photovoltaic effect. © 1992.
Rectifying behaviour of the polymer/semiconductor heterojunction: pbT(p-type)/TiO2(n-type)
TORSI, Luisa;PALMISANO, Francesco;SABBATINI, Luigia;SCAMARCIO, Gaetano;LUGARA', Pietro Mario
1992-01-01
Abstract
A polybithiophene p-type/titanium dioxide n-type ( p-pbT n-TiO2) heterojunction has been prepared by electrochemically depositing in sequence both materials. Electrical investigation reveals the diode-like behaviour with a rectifying ratio at 3 V as high as 3 × 103. The analysis in the framework of the standard semiclassical theory for a p-n junction allows to determine the band alignment. The lower radiative efficiency of p-pbT n-TiO2 with respect to p-pbT/Pt is related to the separation of photogenerated carriers induced by the junction, giving an indirect experimental evidence of a photovoltaic effect. © 1992.File in questo prodotto:
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