Silicon films were deposited in a capacitively coupled glow-discharge in a SiCl4-H2 mixture. The Hall mobility was measured over a large temperature range: 100–400K. The Hall mobility resulted in a thermally non-activated process for T<200K, while it was a thermally activated mechanism for T>200K. Moreover the magnitude of the Hall mobility depends on the crystallite dimensions.

Hall mobility in doped and undoped amorphous Si:H,Cl films.

LIGONZO, Teresa
1983

Abstract

Silicon films were deposited in a capacitively coupled glow-discharge in a SiCl4-H2 mixture. The Hall mobility was measured over a large temperature range: 100–400K. The Hall mobility resulted in a thermally non-activated process for T<200K, while it was a thermally activated mechanism for T>200K. Moreover the magnitude of the Hall mobility depends on the crystallite dimensions.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11586/29030
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