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EnglishSilicon films were deposited in a capacitively coupled glow-discharge in a SiCl4-H2 mixture. The Hall mobility was measured over a large temperature range: 100–400K. The Hall mobility resulted in a thermally non-activated process for T<200K, while it was a thermally activated mechanism for T>200K. Moreover the magnitude of the Hall mobility depends on the crystallite dimensions.
Hall mobility in doped and undoped amorphous Si:H,Cl films. / V. Augelli; R. Murri; N. Alba; Ligonzo T. - In: JOURNAL OF NON-CRYSTALLINE SOLIDS. - ISSN 0022-3093. - 59/60(1983), pp. 481-484.
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| Titolo: | Hall mobility in doped and undoped amorphous Si:H,Cl films. |
| Autori: | |
| Data di pubblicazione: | 1983 |
| Rivista: | |
| Citazione: | Hall mobility in doped and undoped amorphous Si:H,Cl films. / V. Augelli; R. Murri; N. Alba; Ligonzo T. - In: JOURNAL OF NON-CRYSTALLINE SOLIDS. - ISSN 0022-3093. - 59/60(1983), pp. 481-484. |
| Abstract: | Silicon films were deposited in a capacitively coupled glow-discharge in a SiCl4-H2 mixture. The Hall mobility was measured over a large temperature range: 100–400K. The Hall mobility resulted in a thermally non-activated process for T<200K, while it was a thermally activated mechanism for T>200K. Moreover the magnitude of the Hall mobility depends on the crystallite dimensions. |
| Handle: | http://hdl.handle.net/11586/29030 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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