We measured the lattice temperature (TL) distribution, the cross-plane thermal conductivity (k⊥), and the thermal boundary resistance (TBR) of the GaAs/Al0.15Ga0.85As quantum cascade lasers (QCLs) operating at 2.83 THz in the heat sink temperature range 45–300 K. This information was extracted fromthe analysis of microprobe band-to-band photoluminescence in QCLs operating in continuous wave. Both k⊥ and TBR decrease monotonically at increasing temperature, the main influence on k⊥ arising from the high density of interfaces.

Temperature dependence of hermal conductivity and boundary resistance in THz quantumcascade lasers

SCAMARCIO, Gaetano;
2008-01-01

Abstract

We measured the lattice temperature (TL) distribution, the cross-plane thermal conductivity (k⊥), and the thermal boundary resistance (TBR) of the GaAs/Al0.15Ga0.85As quantum cascade lasers (QCLs) operating at 2.83 THz in the heat sink temperature range 45–300 K. This information was extracted fromthe analysis of microprobe band-to-band photoluminescence in QCLs operating in continuous wave. Both k⊥ and TBR decrease monotonically at increasing temperature, the main influence on k⊥ arising from the high density of interfaces.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11586/132827
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