Continuous and modulated C-C4F8 (perfluorocyclobutane) plasmas were used to deposit thin Teflon-like films. Gas phase and film composition and structure were investigated and the results can be rationalized with the deposition mechanism developed in a previous work for C2F4-modulated plasmas. The effect of modulation on the morphology and the chemistry of the surface were studied.
Continuous and modulated deposition of fluorocarbon films from c-C4F8 plasmas
MILELLA, ANTONELLA;FAVIA, Pietro;
2004-01-01
Abstract
Continuous and modulated C-C4F8 (perfluorocyclobutane) plasmas were used to deposit thin Teflon-like films. Gas phase and film composition and structure were investigated and the results can be rationalized with the deposition mechanism developed in a previous work for C2F4-modulated plasmas. The effect of modulation on the morphology and the chemistry of the surface were studied.File in questo prodotto:
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