Synthesis of silicon carbide (SiC) films has been obtained by means of ion beam sputtering. The films have been grown by co-sputtering Si and C targets by means of two Ar-ion beams at substrate temperatures ranging between 30 and 700 degrees C. Chemical, structural and optical analysis have been performed on the samples. The change from amorphous to polycrystalline phase and the relative improvement of the chemical and optical properties have been observed on films grown at 700 degrees C. (C) 1998 Elsevier Science S.A. All rights reserved.
Synthesis of silicon carbide thin films by ion beam sputtering
VALENTINI, Antonio;LIGONZO, Teresa;
1998-01-01
Abstract
Synthesis of silicon carbide (SiC) films has been obtained by means of ion beam sputtering. The films have been grown by co-sputtering Si and C targets by means of two Ar-ion beams at substrate temperatures ranging between 30 and 700 degrees C. Chemical, structural and optical analysis have been performed on the samples. The change from amorphous to polycrystalline phase and the relative improvement of the chemical and optical properties have been observed on films grown at 700 degrees C. (C) 1998 Elsevier Science S.A. All rights reserved.File in questo prodotto:
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