The composition of films deposited in RF glow discharges fed with tetraethoxysilane and oxygen mixtures has been investigated by means of in situ x-ray photoelectron spectroscopy and infrared spectroscopy. These results, combined with mass spectrometric investigations of the gas phase, indicate that the overall deposition consists of several concurrent heterogeneous and homogeneous reactions.

Plasma-Enhanced Chemical Vapor Deposition of Organosilicon Thin Films from Tetraethoxysilane-oxygen Feeds

FRACASSI, Francesco;D'AGOSTINO, Riccardo;FAVIA, Pietro
1992-01-01

Abstract

The composition of films deposited in RF glow discharges fed with tetraethoxysilane and oxygen mixtures has been investigated by means of in situ x-ray photoelectron spectroscopy and infrared spectroscopy. These results, combined with mass spectrometric investigations of the gas phase, indicate that the overall deposition consists of several concurrent heterogeneous and homogeneous reactions.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11586/116108
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