Amorphous SiC/SiO2 distributed Bragg reflectors (DBR) deposited by ion beam sputtering at room temperature is reported on in this letter. The DBR consists of only 2.5 pairs and exhibits high peak reflectivity (84%) around similar to 1.7 mu m with a full width at half maximum of about 1000 nm. The measured reflectivity spectrum is well reproduced by the equivalent layer theory by using the measured refractive indices of SiC and SiO2 and including absorption losses. (C) 1997 American Institute of Physics.

Infrared distributed Bragg reflectors based on amorphous SiC/SiO2 heterostructures

VALENTINI, Antonio;
1997

Abstract

Amorphous SiC/SiO2 distributed Bragg reflectors (DBR) deposited by ion beam sputtering at room temperature is reported on in this letter. The DBR consists of only 2.5 pairs and exhibits high peak reflectivity (84%) around similar to 1.7 mu m with a full width at half maximum of about 1000 nm. The measured reflectivity spectrum is well reproduced by the equivalent layer theory by using the measured refractive indices of SiC and SiO2 and including absorption losses. (C) 1997 American Institute of Physics.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11586/103531
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