The density of states distribution (DOS) in the mobility gap of undoped glow-discharge a-Si1-x Ge(x):H alloy films was determined by means of field effect tecnique. The specimens were grown at different percentages of Ge. The DOS of the films shows a behaviour related to the content of germanium and it is independent of the presence of additional hydrogen in discharge.

PHYSICAL-PROPERTIES OF HYDROGENATED AMORPHOUS GALLIUM-ARSENIDE

SCHIAVULLI, Luigi;
1991-01-01

Abstract

The density of states distribution (DOS) in the mobility gap of undoped glow-discharge a-Si1-x Ge(x):H alloy films was determined by means of field effect tecnique. The specimens were grown at different percentages of Ge. The DOS of the films shows a behaviour related to the content of germanium and it is independent of the presence of additional hydrogen in discharge.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11586/87867
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