A polyanionic proton conductor, named poly(4-styrenesulfonic acid) (PSSH), was used to gate an Organic Thin-Film Transistor (OFET) based on p-type poly(2,5-bis(3-tetradecylthiophen-2-yl)thienol [3,2-b]thiophene) (pBTTT-C14) organic semiconductor (OSC). Different device configurations were evaluated and a bottom gate – top contact (BGTC) device was investigated as transducer for gas sensing measurements. The sensors׳ performance in terms of stability, repeatability and reproducibility were evaluated when the device was exposed to different concentrations of 1-butanol. Comparison with a conventionally gated OFET (SiO2 dielectric instead of PSSH) was also performed.
Low-voltage solid electrolyte-gated OFETs for gas sensing applications
MANOLI, KYRIAKI;MAGLIULO, MARIA;PALAZZO, Gerardo;TORSI, Luisa
2014-01-01
Abstract
A polyanionic proton conductor, named poly(4-styrenesulfonic acid) (PSSH), was used to gate an Organic Thin-Film Transistor (OFET) based on p-type poly(2,5-bis(3-tetradecylthiophen-2-yl)thienol [3,2-b]thiophene) (pBTTT-C14) organic semiconductor (OSC). Different device configurations were evaluated and a bottom gate – top contact (BGTC) device was investigated as transducer for gas sensing measurements. The sensors׳ performance in terms of stability, repeatability and reproducibility were evaluated when the device was exposed to different concentrations of 1-butanol. Comparison with a conventionally gated OFET (SiO2 dielectric instead of PSSH) was also performed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
