Silicon films were deposited in a capacitively coupled glow-discharge in a SiCl4-H2 mixture. The Hall mobility was measured over a large temperature range: 100–400K. The Hall mobility resulted in a thermally non-activated process for T<200K, while it was a thermally activated mechanism for T>200K. Moreover the magnitude of the Hall mobility depends on the crystallite dimensions.
Hall mobility in doped and undoped amorphous Si:H,Cl films.
LIGONZO, Teresa
1983-01-01
Abstract
Silicon films were deposited in a capacitively coupled glow-discharge in a SiCl4-H2 mixture. The Hall mobility was measured over a large temperature range: 100–400K. The Hall mobility resulted in a thermally non-activated process for T<200K, while it was a thermally activated mechanism for T>200K. Moreover the magnitude of the Hall mobility depends on the crystallite dimensions.File in questo prodotto:
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