Photocurrent spectra of a 50 angstrom period superlattice (SL) of GaAs/Al3Ga7As, were measured in the range 14-300 K in a low electric field regime. The energy gap between the heavy-hole and electron extended states of the SL shows the same dependence on temperature as its bulk components. The decrease of photocurrent in the range 100-300 K indicates transport in the extended states of the SL. Different photo-ionization of DX centres existing in the n-doped layers of Al3Ga7As causes an effective asymmetry in the n-i-n structure.

PHOTOCURRENT SPECTROSCOPY IN N-I-N GAAS/AL.3GA.7AS SHORT-PERIOD SUPERLATTICE

LIGONZO, Teresa;
1995-01-01

Abstract

Photocurrent spectra of a 50 angstrom period superlattice (SL) of GaAs/Al3Ga7As, were measured in the range 14-300 K in a low electric field regime. The energy gap between the heavy-hole and electron extended states of the SL shows the same dependence on temperature as its bulk components. The decrease of photocurrent in the range 100-300 K indicates transport in the extended states of the SL. Different photo-ionization of DX centres existing in the n-doped layers of Al3Ga7As causes an effective asymmetry in the n-i-n structure.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11586/27334
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