Schottky barrier diodes of Ti on n-GaAs wafers were made by means of an ion beam sputtering (IBS) system under various sputtering conditions. We have investigated Schottky diode parameters by I-V and C-V measurements, and deep level centers by deep level transient spectroscopy (DLTS). The electrical characteristics are typical of good quality Ti/GaAs Schottky diodes for all samples, although a slight deterioration of the electrical performances has been observed for samples prepared at higher beam voltage. DLTS investigation shows the presence of damage defects in concentration lower than 1 x 10(14) cm-3 for all samples with the exception of those prepared at higher beam voltage. Such low concentration of defects introduced by the sputtering deposition shows that IBS can be a very useful technique to prepare Schottky barriers on GaAs.

TI/GAAS SCHOTTKY BARRIERS PREPARED BY ION-BEAM SPUTTERING

VALENTINI, Antonio
1992-01-01

Abstract

Schottky barrier diodes of Ti on n-GaAs wafers were made by means of an ion beam sputtering (IBS) system under various sputtering conditions. We have investigated Schottky diode parameters by I-V and C-V measurements, and deep level centers by deep level transient spectroscopy (DLTS). The electrical characteristics are typical of good quality Ti/GaAs Schottky diodes for all samples, although a slight deterioration of the electrical performances has been observed for samples prepared at higher beam voltage. DLTS investigation shows the presence of damage defects in concentration lower than 1 x 10(14) cm-3 for all samples with the exception of those prepared at higher beam voltage. Such low concentration of defects introduced by the sputtering deposition shows that IBS can be a very useful technique to prepare Schottky barriers on GaAs.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11586/23591
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