Radiative recombination processes in highly excited ZnSe/ZnS0.18Se0.82 multiple-quantum-well structures have been investigated as a function of the well width and of the lattice strain. Excitonic scattering processes dominate the photoluminescence spectra. An optical amplification process is observed, up to room temperature, due to inelastic exciton-exciton scattering. An optical excitation threshold around 300 kW/cm2 at 300 K and 8.4 kW/cm2 at 10 K was measured for the stimulated emission.

RADIATIVE RECOMBINATION PROCESSES IN ZNSE/ZNSEXSE1-X MULTIPLE-QUANTUM-WELL STRUCTURES

DABBICCO, Maurizio;SCAMARCIO, Gaetano;
1993-01-01

Abstract

Radiative recombination processes in highly excited ZnSe/ZnS0.18Se0.82 multiple-quantum-well structures have been investigated as a function of the well width and of the lattice strain. Excitonic scattering processes dominate the photoluminescence spectra. An optical amplification process is observed, up to room temperature, due to inelastic exciton-exciton scattering. An optical excitation threshold around 300 kW/cm2 at 300 K and 8.4 kW/cm2 at 10 K was measured for the stimulated emission.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11586/128342
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