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Titolo Data di pubblicazione Autore(i) File
Generalized Bell'sinequalities 1-gen-1977 Schiavulli, Luigi
Further consequences of Einstein locality 1-gen-1979 Schiavulli, Luigi; Selleri, F.
Optical constants of silicon films deposited by the r.f. glow discharge of SiCl4 1-gen-1981 Augelli, V; Murri, R; Schiavulli, Luigi; Bruno, G; Capezzuto, P; Cramarossa, F; Evangelisti, P; Fortunato, G.
Optical and Electrical properties of glow-discharge silicon films 1-gen-1982 Augelli, V; Murri, R; Schiavulli, Luigi
Effects of the dopants on the electrical conductivity and Hall mobility in Si:H,Cl films 1-gen-1985 Augelli, V; Ligonzo, Teresa; Murri, R; Schiavulli, Luigi
Field-Effect measurements in hydrogenated and chlorinated amorphous-silicon films 1-gen-1985 Augelli, V; Dilecce, G; Murri, R; Schiavulli, Luigi
Photoconductivity in doped microcrystalline Si:H,Cl Films 1-gen-1986 Augelli, V; Ligonzo, Teresa; Murri, R; Schiavulli, Luigi
Analytical determination of the density-of-gap-states in amorphous semiconductors: Experimental results 1-gen-1987 Augelli, V; Berardi, V; Murri, R; Schiavulli, Luigi; Leo, M; Leo, R. A.; Soliani, G.
Evaluation of density of states distribution in amorphous silicon films by photoconductivity measurements 1-gen-1987 Augelli, V; Ligonzo, T; Murri, R; Schiavulli, Luigi
PHOTOCONDUCTIVITY MEASUREMENTS AS A TOOL FOR THE EVALUATION OF THE DENSITY OF STATES IN AMORPHOUS-SILICON 1-gen-1988 Augelli, V; Berardi, V; Murri, R; Schiavulli, Luigi
DENSITY OF STATES IN A-SI-H,CL DETERMINED BY SPACE-CHARGE-LIMITED CURRENTS 1-gen-1988 Ligonzo, Teresa; Murri, R; Augelli, V; Schiavulli, Luigi
THE DENSITY OF STATES IN THE MOBILITY GAP OF HALOGENATED AMORPHOUS-SILICON 1-gen-1989 Augelli, V; Murri, R; Schiavulli, Luigi
DEPOSITION RATE, ION-BOMBARDMENT AND GAP STATES DENSITY IN GLOW-DISCHARGE A-SI-H,F FILMS 1-gen-1989 Murri, R; Schiavulli, Luigi; Bruno, G; Capezzuto, P; Grillo, G.
PHOTOVOLTAIC CHARACTERIZATION OF AMORPHOUS HYDROGENATED AND CHLORINATED 1-gen-1989 Augelli, V; Ligonzo, Teresa; Murri, R; Schiavulli, Luigi
ELECTRONIC-PROPERTIES OF AMORPHOUS GALLIUM-ARSENIDE DEPOSITED BY REACTIVE SPUTTERING 1-gen-1989 Casamassima, G; Ligonzo, Teresa; Murri, R; Pinto, N; Schiavulli, Luigi; Valentini, Antonio
PHOTOVOLTAIC CHARACTERIZATION OF AMORPHOUS HYDROGENATED AND CHLORINATED SILICON FILMS 1-gen-1989 Augelli, V; Ligonzo, Teresa; Murri, R; Schiavulli, Luigi
STRUCTURAL CHARACTERIZATION OF UNHYDROGENATED AMORPHOUS GAAS 1-gen-1991 Murri, R; Gozzo, F; Pinto, N; Schiavulli, Luigi; Deblasi, C; Manno, D.
PHYSICAL-PROPERTIES OF HYDROGENATED AMORPHOUS GALLIUM-ARSENIDE 1-gen-1991 Carbone, A; Demichelis, F; Kaniadakis, G; Gozzo, F; Murri, R; Pinto, N; Schiavulli, Luigi; Dellamea, G; Drigo, A; Paccagnella, A.
THE DENSITY OF STATES IN THE MOBILITY GAP OF A-SI1-X GEX FILMS 1-gen-1991 Gozzo, F; Murri, R; Pinto, N; Schiavulli, Luigi
STRUCTURAL CHARACTERIZATION OF HYDROGENATED AMORPHOUS GAAS 1-gen-1992 Murri, R; Pinto, N; Schiavulli, Luigi; Fukuhisa, R; Mirenghi, L.
Mostrati risultati da 1 a 20 di 106
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